Anthony Muscat
Anthony Muscat
Phone: 
(520) 621-6162
Professor/Department Chair
Email: 
muscat@erc.arizona.edu
External Website: 
http://muscat.chee.arizona.edu

Research Area
•    Semiconductor surface cleaning, preparation, and etching
•    Surface chemistry of atomic layer deposition (ALD)
•    Self-assembled monolayer (SAM) formation
•    Synthesis and self-assembly of semiconductor quantum dots
•    Fabrication of nanoporous noble metals

http://muscat.chee.arizona.edu

Curriculum Vitae

Educational Qualifications
•    B.S., Chemical and Environmental Engineering, UC Davis, 1982
•    M.S., Chemical Engineering, Stanford University, 1983
•    Ph.D., Chemical Engineering, Stanford University, 1993
 

Research
Dr. Anthony Muscat's group's research interests are in surface chemistry, specifically the chemical processes used to clean, etch, or deposit on the surfaces of solids, including 2D planes and 3D nanostructures. An understanding of surface chemistry can be used to optimize existing materials used in microelectronics, catalysis, or solar energy conversion and develop new materials with unique properties. The primary research goals are learning how chemical reactions take place on surfaces and how the atom or molecular group terminating a surface affects the types of structures that can be built on it or using it as a building block. Understanding the reaction mechanism provides a means to rationally design interfaces for specific purposes. Current research projects include 1) engineering the surfaces of semiconductors (GaAs, InAs, InGaAs, CuInS2) for advanced electronic, optoelectronic, and solar devices, 2) synthesis and self-assembly of nanoparticles such as quantum dots (clusters of atoms 1-5 nm in diameter), 3) self-assembled monolayer (SAM) formation, and 4) dealloying metal alloys using liquids and supercritical fluids to make nanoporous noble metal films and composites. We approach these problems by using experiments and modeling to understand the mechanisms of the surface chemical reactions that are at the heart of these technologies.

Experimental Capabilities

We have both wet and dry (vacuum) facilities for processing and fabricating devices using a range of materials. The wet processing includes standard chemistries for cleaning and etching semiconductor surfaces. There is a separate fume hood for synthesizing semiconductor and metal quantum dot and colloidal suspensions. There are two high pressure reactors for supercritical CO2 processing. The vacuum apparatus consists of a series of reactors connected together to avoid air exposure of samples between processing steps. There are reactors for HF/vapor, UV photochemistry, and atomic layer deposition (ALD) of oxide dielectrics, and molecular vapor deposition (MVD). In addition, we have furnaces for annealing samples in reactive and inert gases.

The characterization facilities within the group include x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, Fourier transform infrared (FTIR) spectroscopy, ellipsometry, mass spectroscopy including temperature programmed desorption (TPD), atomic force microscopy (AFM), goniometry (contact angle), and optical characterization using photoluminescence (PL), photoluminescence excitation (PLE), and UV-visible spectroscopy. The electrical device testing apparatus is equipped with LCR meters and probe station.

Awards/Honors
•    APS Professorship, College of Engineering, University of Arizona (2009-2012)
•    da Vinci Circle Fellowship UA College of Engineering (2005)
•    Scientific American 50 Technology Leaders, Policy Leader in Chemicals and Materials Science (2003)
•    Professor of the Year, Tau Beta Pi, University of Arizona (1998)
•    NSF CAREER Award (1997-2002)
 

Selected Publications
B. Granados and A. J. Muscat,”Interfacial Chemistry of HF-treated In0.53Ga0.47As(100) During Atomic Layer Deposition of Aluminum Oxide,” J. Vac. Sci. Technol. A, 31, 01A143 (2013). DOI: dx.doi.org/10.1116/1.4770288.

F. Jiang and A. J. Muscat, Ligand-Controlled Growth of ZnSe Quantum Dots in Water during Ostwald Ripening,” Langmuir 28(36), 12931-12940 (2012). DOI: 10.1021/la301186n.

F. L. Lie, W. Rachmady, A. J. Muscat, “Oxide Removal and Selective Etching of In from InSb(100) with TiCl4,” J. Phys. Chem. C 115(40), 19733-19740 (2011). DOI: 10.1021/jp204408n.

B. Granados-Alpizar and A. J. Muscat,”Surface Reactions of TiCl4 and Al(CH3)3 on GaAs(100) During the First Half-Cycle of Atomic Layer Deposition” Surf. Sci. 605, 1243-1248 (2011). DOI:10.1016/j.susc.2011.04.009.

F. L. Lie, A. J. Muscat, “Controlled oxide removal and surface morphology on InSb(100) using gas phase HF/H2O,” J. Phys. Chem. C 115(15), 7440-7449 (2011). DOI: 10.1021/jp110151y.

R. Morrish, K. Dorame, A. J. Muscat, “Formation of nanoporous Au by dealloying AuCu thin films in HNO3,” Scripta Materialia 64(9), 856-859 (2011). DOI: 10.1016/j.scriptamat.2011.01.021.

R. Morrish and A. J. Muscat, “Nanoporous silver with controllable optical properties formed by chemical dealloying in supercritical CO2,” Chemistry of Materials 21, 3865-3870 (2009).

Z. Deng, M. Mansuripur, A. J.  Muscat, “Synthesis of two-dimensional single-crystal berzelianite nanosheets and nanoplates with near-infrared optical absorption,” J. Mater. Chem. 19, 6201 - 6206 (2009), DOI: 10.1039/b907452j.

Z. Deng, M. Mansuripur, A. J.  Muscat, “Simple Colloidal Synthesis of Single-Crystal Sb-Se-S Nanotubes with Composition Dependent Band-Gap Energy in the Near-Infrared,” 9(5), 2015-2020 (2009), DOI: 10.1021/nl9002816.

Z. Deng, D. Chen, F. Tang, J. Ren, A. J. Muscat, “Synthesis and purple-blue emission of antimony trioxide single-crystalline nanobelts with elliptical cross section” Nano Research 2, 151-160 (2009), DOI: 10.1007/s12274-009-9014-y.

Z. Deng, F.-L. Lie, S. Shen, I. Ghosh, M. Mansuripur, A. J.  Muscat, “Water-based route to ligand-selective synthesis of ZnSe and Cd-doped ZnSe quantum dots with tunable ultraviolet A to blue photoluminescence” Langmuir 25 (1), 434-442 (2009).

M. Durando, R. Morrish, A. J. Muscat, “Kinetics and mechanism for the reaction of hexafluoroacetylacetone with CuO in supercritical carbon dioxide” JACS 130 (49) 16659-16668 (2008), DOI: 10.1021/ja8050662.

Faculty

University of Arizona College of Engineering